NEWS
April 8, 2009 17:11.24

RF Power Amplifiers employing new 50V technology devices
ABE is among the first companies in the world to have developed a new series of VHF / UHF band amplifiers employing the latest generation of MOS and LD-MOS devices (transistors) supplied at 50V.

In solid state transmitter technological evolution, at the beginning, power devices were supplied at 24V, then, devices at 28V were introduced, followed by those operating with a 32V power supply. Today ABE is introducing the new 50V generation.

This technological innovation makes possible a significant step forward; amplifier output power increases with better efficiency, improved linearity and power amplifiers whose physical dimensions reduce.

Regarding UHF digital amplifiers (DVB-T/H & ATSC), ABE has developed a wide band power amplifier, fitting into a single 5U air cooled rack drawer, with an output power of 1.2 kWavg, an MER greater than 35dB and efficiency better than 15%.

The 5U rack drawer houses, in addition to the power amplifier, the pre-amplifier stage, the switch-mode power supplies with PFC (Power Factor Corrector) and the air cooling system.

Some of the technological solutions developed by ABE and implemented in this new 50V technology power amplifier series, are patent pending.
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